NVD4815NT4G【PDF 2/8 页】MOSFET N-CH 30V 6.9A DPAK-4

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NTD4815N, NVD4815N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction ? to ? Case (Drain)

Junction ? to ? TAB (Drain)

Junction ? to ? Ambient – Steady State (Note 1)

Junction ? to ? Ambient – Steady State (Note 2)

Symbol

R q JC

R q JC ? TAB

R q JA

R q JA

Value

4.6

3.5

78

119

Unit

° C/W

1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.

2. Surface ? mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain ? to ? Source Breakdown Voltage

Drain ? to ? Source Breakdown Voltage

Temperature Coefficient

V (BR)DSS

V (BR)DSS /

T J

V GS = 0 V, I D = 250 m A

30

25

V

mV/ ° C

Zero Gate Voltage Drain Current

I DSS

V GS = 0 V,

V DS = 24 V

T J = 25 ° C

T J = 125 ° C

1

10

m A

Gate ? to ? Source Leakage Current

I GSS

V DS = 0 V, V GS = ± 20 V

± 100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

V GS(TH)

V GS(TH) /T J

V GS = V DS , I D = 250 m A

1.5

5.6

2.5

V

mV/ ° C

Drain ? to ? Source On Resistance

R DS(on)

V GS = 10 V to

11.5 V

V GS = 4.5 V

I D = 30 A

I D = 15 A

I D = 30 A

12

11.5

21

15

25

m W

I D = 15 A

18.3

Forward Transconductance

g FS

V DS = 15 V, I D = 10 A

6.0

S

CHARGES AND CAPACITANCES

Input Capacitance

C ISS

770

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate ? to ? Source Charge

Gate ? to ? Drain Charge

Total Gate Charge

C OSS

C RSS

Q G(TOT)

Q G(TH)

Q GS

Q GD

Q G(TOT)

V GS = 0 V, f = 1.0 MHz, V DS = 12 V

V GS = 4.5 V, V DS = 15 V; I D = 30 A

V GS = 11.5 V, V DS = 15 V;

I D = 30 A

181

108

6.0

0.9

2.5

3.1

14.1

6.6

pF

nC

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn ? On Delay Time

t d(ON)

10.5

Rise Time

Turn ? Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = 4.5 V, V DS = 15 V, I D = 15 A,

R G = 3.0 W

21.4

11.4

3.5

ns

3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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